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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CCS, NLP 2019-06-09
12:00
Niigata machinaka campus nagaoka Characteristic Measures in Optimized Power Grid Using Simulated Annealing
Toshichika Aoki (Nippon Institute of Tec.), Hideyuki Kato (Oita Univ.), Takayuki Kimura (Nippon Institute of Tec.)
The electric power generated at power plants to surrounding consumers are the most important in- frastructure for a comf... [more] NLP2019-32 CCS2019-15
pp.69-74
NLP 2019-05-11
10:00
Oita J:COM HoltoHALL OITA A study of spreading information in different network structures
Ryu Uto, Toshichika Aoki, Takayuki Kimura (Nippon Institute of Tech)
In cases many people are in disaster,
they are difficult to figure out whether obtained information is real or not.
If... [more]
NLP2019-11
pp.59-64
ED 2015-07-24
13:15
Ishikawa IT Business Plaza Musashi 5F Electrical characteristics of N-polar p-type GaN Schottky contacts
Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui)
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] ED2015-36
pp.1-4
ED 2015-07-24
13:40
Ishikawa IT Business Plaza Musashi 5F Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates
Moe Naganawa, Toshichika Aoki (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)
 [more] ED2015-37
pp.5-8
CPM, LQE, ED 2013-11-28
14:45
Osaka   Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates
Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal)
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] ED2013-71 CPM2013-130 LQE2013-106
pp.35-38
CPM, LQE, ED 2013-11-28
15:10
Osaka   AC Operation of Low-Mg-Doped p-GaN Schottky Diodes
Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal)
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] ED2013-72 CPM2013-131 LQE2013-107
pp.39-42
 Results 1 - 6 of 6  /   
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