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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2011-04-18
13:30
Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] Technology Trend of NAND Flash Memories -- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology --
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) ICD2011-4
A 64Gbit 2bit/cell NAND flash memory capable of 14MB/s programming and 266MB/s data transfer is fabricated in 24nm techn... [more] ICD2011-4
pp.19-26
ICD 2009-04-14
13:00
Miyagi Daikanso (Matsushima, Miyagi) [Invited Talk] A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.) ICD2009-8
A 113mm2 32Gbit 3bit/cell (8-levels) NAND Flash memory using 32nm CMOS technology is developed. This 32Gbit Flash die is... [more] ICD2009-8
pp.39-42
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