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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-24 16:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices Yuchen Deng, Hibiki Anaba, Hideyuki Matsuyama, Toshi-kazu Suzuki (JAIST)  ED2022-39 CPM2022-64 LQE2022-72 |
[more] | ED2022-39 CPM2022-64 LQE2022-72 pp.69-72 |
| SDM, ED, CPM | 2022-05-27 17:05 |
Online | Online | Characterization method of semiconductors under Ohmic-metals by using multi-probe Hall devices Kazuya Uryu (JAIST/ATL), Shota Kiuchi (JAIST), Taku Sato (ATL), Toshi-kazu Suzuki (JAIST) ED2022-15 CPM2022-9 SDM2022-22 |
(To be available after the conference date) [more] | ED2022-15 CPM2022-9 SDM2022-22 pp.35-38 |
| ED, CPM, LQE | 2021-11-26 13:50 |
Online | Online | Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki (JAIST) ED2021-30 CPM2021-64 LQE2021-42 |
[more] | ED2021-30 CPM2021-64 LQE2021-42 pp.71-74 |
| ED | 2016-07-23 14:25 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Lorentzian low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices Toshi-kazu Suzuki, Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih (JAIST) ED2016-28 |
[more] | ED2016-28 pp.5-9 |
| ED | 2015-07-24 14:30 |
Ishikawa | IT Business Plaza Musashi 5F | Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices Toshi-kazu Suzuki, Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih (JAIST) ED2015-39 |
[more] | ED2015-39 pp.15-20 |
| ED | 2013-08-08 15:30 |
Toyama | University of Toyama | [Invited Talk]
Analysis of GaN-based metal-insulator-semiconductor devices by capacitance-frequency-temperature mapping Toshi-kazu Suzuki, Hong-An Shih, Masahiro Kudo (JAIST) ED2013-40 |
[more] | ED2013-40 pp.15-18 |
| ED | 2013-08-08 16:20 |
Toyama | University of Toyama | Application of sputtering-deposited BN films to AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors Yuji Yamamoto, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) ED2013-41 |
[more] | ED2013-41 pp.19-23 |
| LQE, OPE | 2013-06-21 14:00 |
Tokyo | GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20 |
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] | OPE2013-10 LQE2013-20 pp.19-22 |
|
| ED | 2012-07-26 14:20 |
Fukui | Fukui University | Temperature dependence of frequency dispersion in $C$-$V$ characteristics of AlN/AlGaN/GaN MIS-HFET Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) ED2012-43 |
[more] | ED2012-43 pp.11-15 |
| ED | 2011-07-29 14:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-39 |
[more] | ED2011-39 pp.13-16 |
| ED | 2011-07-29 15:45 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001) Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-42 |
[more] | ED2011-42 pp.25-30 |
| ED | 2010-06-17 13:25 |
Ishikawa | JAIST | Fabrication and characterization of InAs ultra-thin films on flexible substrates Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2010-34 |
(To be available after the conference date) [more] | ED2010-34 pp.5-9 |
| ED | 2010-06-17 14:25 |
Ishikawa | JAIST | Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) ED2010-36 |
(To be available after the conference date) [more] | ED2010-36 pp.17-20 |
| ED | 2009-06-12 09:55 |
Tokyo | Anisotropy of two-dimensional electron mobilities in InGaAs/InP Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST) ED2009-45 |
[more] | ED2009-45 pp.47-50 |
|
| SDM, ED | 2008-07-09 11:15 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration Toshi-kazu Suzuki (JAIST) ED2008-40 SDM2008-59 |
Narrow-gap III-V semiconductors, such as InAs, InGaAs/InAlAs with high indium compositions, InSb, and InGaSb/InAlSb, ar... [more] |
ED2008-40 SDM2008-59 pp.3-8 |
| ED | 2008-06-13 13:00 |
Ishikawa | Kanazawa University | Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 |
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] | ED2008-22 pp.1-4 |
| ED | 2008-06-14 10:15 |
Ishikawa | Kanazawa University | Heterogeneous integration of InAs thin films by epitaxial lift-off and van der Waals bonding Hayato Takita, Masahiro Kudo, Nariaki Tanaka, Toshi-kazu Suzuki (JAIST) ED2008-35 |
We investigated epitaxial lift-off (ELO) of InAs thin films and their van der Waals bonding (VWB) on SiO$_2$/Si substrat... [more] | ED2008-35 pp.73-76 |
| ED | 2007-06-15 14:25 |
Toyama | Toyama Univ. | Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO2/Si wafers Hayato Takita, Yonkil Jeong, Jun-ya Arita, Toshi-kazu Suzuki (JAIST) ED2007-34 |
We investigated epitaxial lift-off (ELO) of InAs thin films using lattice-mismatched InAs top layer/AlAs sacrificial la... [more] |
ED2007-34 pp.17-20 |
| ED | 2007-06-16 10:35 |
Toyama | Toyama Univ. | Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) ED2007-43 |
We have investigated AlN surface passivation for AlGaN/GaN heterojunction field-effect transistors (HFETs). After the ... [more] | ED2007-43 pp.67-70 |
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