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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, LSJ | 2016-05-19 14:15 |
Fukui | Organic Membrane Photonic Integrated Circuit (OMPIC) Tomohiro Amemiya, Toru Kanazawa, Takuo Hiratani, Zhichen Gu, Naoya Hojo (Tokyo Tech), Tatsuhiro Urakami (Mitsui Chemicals, Inc.), Shigehisa Arai (Tokyo Tech)  LQE2016-2 |
We outline a proposal for an membrane photonic integrated circuits (OMPICs). This paper also indicates possible forms fo... [more] | LQE2016-2 pp.5-10 |
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| CPM, ED, SDM | 2016-05-20 10:20 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech) ED2016-23 CPM2016-11 SDM2016-28 |
[more] | ED2016-23 CPM2016-11 SDM2016-28 pp.47-50 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| ED | 2014-08-01 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56 |
Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] | ED2014-56 pp.19-24 |
| ED, MW | 2014-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs tri-gate MOSFETs with MOVPE regrown source/drain Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2013-115 MW2013-180 pp.29-33 |
| OPE | 2013-12-20 16:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Permeability control on InP-based photonic integration platform using metamaterial Tomohiro Amemiya, Toru Kanazawa (Tokyo Tech.), Atsushi Ishikawa (RIKEN), JoonHyun Kang, Nobuhiko Nishiyama, Yasuyuki Miyamoto (Tokyo Tech.), Takuo Tanaka (RIKEN), Shigehisa Arai (Tokyo Tech.) OPE2013-146 |
[more] | OPE2013-146 pp.45-50 |
| ED | 2011-12-14 13:00 |
Miyagi | Tohoku University | [Invited Talk]
High current density of InGaAs MOSFET Yasuyuki Miyamoto, Yoshiharu Yonai, Toru Kanazawa (Tokyo Tech) ED2011-100 |
ITRS requests drain current over 2A/mm at supplied voltage of 0.6 V in future MOSFET. To realize required high drivabili... [more] | ED2011-100 pp.1-6 |
| MW, ED | 2011-01-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | III-V quantum well channel MOSFET with back electrode Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148 |
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] | ED2010-188 MW2010-148 pp.69-73 |
| ED, MW | 2010-01-14 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164 |
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] | ED2009-181 MW2009-164 pp.39-42 |
| SDM, ED | 2009-06-25 09:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
InGaAs/InP MISFET with epitaxially grown source Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-72 SDM2009-67 |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivabili... [more] | ED2009-72 SDM2009-67 pp.99-103 |
| ED, SDM | 2006-01-27 09:50 |
Hokkaido | Hokkaido Univ. | - Toru Kanazawa, Atsushi Morosawa, Ryo Fujii, Takafumi Wada, Masahiro Watanabe, Masahiro Asada (Tokyo Institute of Technology Univ.) |
[more] | ED2005-233 SDM2005-245 pp.11-14 |
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