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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 34件中 1~20件目  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-10-24
15:10
Miyagi Niche, Tohoku Univ. Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy
Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
A high precision 1 Ω – 10 MΩ range resistance measurement platform is presented. The developed platform excludes on-resi... [more] SDM2019-65
pp.59-64
SDM 2019-10-24
15:40
Miyagi Niche, Tohoku Univ. Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor
Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
This paper reports on gas concentration imaging using lateral overflow integration trench capacitor(LOFITreC) CMOS absor... [more] SDM2019-66
pp.65-68
SDM 2018-10-18
14:00
Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
SDM 2017-10-25
14:50
Miyagi Niche, Tohoku Univ. Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ)
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] SDM2017-51
pp.9-14
SDM 2016-10-26
14:50
Miyagi Niche, Tohoku Univ. Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku)
 [more] SDM2016-70
pp.9-14
SDM 2016-10-27
10:00
Miyagi Niche, Tohoku Univ. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA)
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] SDM2016-73
pp.27-30
SDM 2016-10-27
10:50
Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
pp.35-38
EID, SDM 2015-12-14
11:00
Kyoto Ryukoku University, Avanti Kyoto Hall Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for... [more] EID2015-9 SDM2015-92
pp.1-4
SDM 2015-10-29
15:20
Miyagi Niche, Tohoku Univ. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] SDM2015-73
pp.13-16
SDM 2015-10-29
16:00
Miyagi Niche, Tohoku Univ. Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi)
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2015-74
pp.17-22
SDM 2015-10-30
10:20
Miyagi Niche, Tohoku Univ. A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.)
 [more] SDM2015-77
pp.35-40
SDM 2015-10-30
15:30
Miyagi Niche, Tohoku Univ. Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2015-83
pp.63-68
SDM 2014-10-16
14:50
Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi)
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
pp.7-12
SDM 2014-10-17
10:00
Miyagi Niche, Tohoku Univ. Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation
Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] SDM2014-89
pp.31-34
SDM 2014-10-17
13:50
Miyagi Niche, Tohoku Univ. Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] SDM2014-93
pp.55-59
SDM 2012-10-25
15:20
Miyagi Tohoku Univ. (Niche) Chemical structures of compositional transition layer at SiO2/Si(100) interface
Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2012-89
pp.1-4
SDM 2012-10-25
16:10
Miyagi Tohoku Univ. (Niche) Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction
Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe)
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] SDM2012-91
pp.11-14
SDM 2012-10-26
09:55
Miyagi Tohoku Univ. (Niche) Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer
Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2012-93
pp.21-26
SDM 2012-10-26
10:20
Miyagi Tohoku Univ. (Niche) [Special Talk] Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization
Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.)
 [more] SDM2012-94
pp.27-32
SDM 2011-10-20
15:45
Miyagi Tohoku Univ. (Niche) On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology
Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2011-101
pp.21-26
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