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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.)  ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
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| CPM, ED, LQE | 2022-11-24 14:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2022-33 CPM2022-58 LQE2022-66 |
[more] | ED2022-33 CPM2022-58 LQE2022-66 pp.45-48 |
| ED, CPM, LQE | 2021-11-26 13:25 |
Online | Online | Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] | ED2021-29 CPM2021-63 LQE2021-41 pp.67-70 |
| LQE, CPM, ED | 2020-11-26 14:10 |
Online | Online | Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60 |
[more] | ED2020-9 CPM2020-30 LQE2020-60 pp.33-36 |
| ED, LQE, CPM | 2018-11-29 14:40 |
Aichi | Nagoya Inst. tech. | Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage Kenji Shiojima, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2018-36 CPM2018-70 LQE2018-90 |
We applied scanning internal photoemission microscopy (SIPM) method to characterize the initial stage of the degradation... [more] | ED2018-36 CPM2018-70 LQE2018-90 pp.17-20 |
| LQE, CPM, ED | 2017-11-30 16:15 |
Aichi | Nagoya Inst. tech. | Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.) ED2017-55 CPM2017-98 LQE2017-68 |
We characterized the effect of the surface morphology on electrical properties of the n-GaN drift-layers by using scanni... [more] | ED2017-55 CPM2017-98 LQE2017-68 pp.27-32 |
| LQE, CPM, ED | 2017-11-30 16:40 |
Aichi | Nagoya Inst. tech. | Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates
-- Metal workfunction dependence of Schottky barrier height -- Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2017-56 CPM2017-99 LQE2017-69 |
We report electrical characteristics of Schottky contacts with 9 different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, Pt) fo... [more] | ED2017-56 CPM2017-99 LQE2017-69 pp.33-38 |
| CPM, LQE, ED | 2016-12-12 13:25 |
Kyoto | Kyoto University | Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-58 CPM2016-91 LQE2016-74 |
We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky con... [more] | ED2016-58 CPM2016-91 LQE2016-74 pp.5-8 |
| CPM, LQE, ED | 2016-12-12 14:15 |
Kyoto | Kyoto University | Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-60 CPM2016-93 LQE2016-76 |
We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any ... [more] | ED2016-60 CPM2016-93 LQE2016-76 pp.15-20 |
| ED | 2015-07-24 13:40 |
Ishikawa | IT Business Plaza Musashi 5F | Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates Moe Naganawa, Toshichika Aoki (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-37 |
[more] | ED2015-37 pp.5-8 |
| CPM, LQE, ED | 2013-11-28 14:45 |
Osaka | Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-71 CPM2013-130 LQE2013-106 |
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] | ED2013-71 CPM2013-130 LQE2013-106 pp.35-38 |
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| CPM, LQE, ED | 2013-11-28 15:10 |
Osaka | AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-72 CPM2013-131 LQE2013-107 |
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] | ED2013-72 CPM2013-131 LQE2013-107 pp.39-42 |
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| ED | 2012-07-26 15:25 |
Fukui | Fukui University | Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] | ED2012-45 pp.21-24 |
| ED | 2012-07-26 15:50 |
Fukui | Fukui University | Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 |
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] | ED2012-46 pp.25-30 |
| ED, MW | 2012-01-11 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] | ED2011-125 MW2011-148 pp.35-40 |
| ED | 2007-06-16 11:00 |
Toyama | Toyama Univ. | Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44 |
We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance wi... [more] | ED2007-44 pp.71-74 |
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