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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2016-05-19
15:00
Shizuoka Shizuoka University, Hamamatsu campus (Joint Research Lab.) Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors
Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) ED2016-17 CPM2016-5 SDM2016-22
 [more] ED2016-17 CPM2016-5 SDM2016-22
pp.19-23
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