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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-06-25 12:00 |
Aichi |
Nagoya Univ. VBL3F |
Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT) SDM2018-19 |
In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation ... [more] |
SDM2018-19 pp.15-18 |
SDM |
2012-06-21 12:15 |
Aichi |
VBL, Nagoya Univ. |
Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.) |
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more] |
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SDM |
2011-07-04 15:00 |
Aichi |
VBL, Nagoya Univ. |
The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64 |
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] |
SDM2011-64 pp.81-85 |
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