IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OCS, CS
(Joint)		 2024-01-11
13:25		 Kagoshima   Studies for Quantum-Classic Hybrid Systems Employing Logics and Algorithms in Digital Communications
Shota Koshikawa, Aruto Hosaka, Shota Nishikawa, Yoshiaki Konishi (MELCO), Motoya Shinozaki, Tomohiro Otsuka, Hasitha Muthumala Waidyasooriya, Masanori Hariyama (Tohoku Univ.), Tsuyoshi Yoshida (MELCO) CS2023-94		 Quantum computing would potentially solve kinds of problems in various fields extremely faster than classic computing ba... [more] CS2023-94
pp.6-9
MW, ED 2023-01-27
12:50		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study --
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150		 GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characte... [more] ED2022-91 MW2022-150
pp.29-32
CPM, ED, LQE 2022-11-24
14:35		 Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)		 Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement
Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) ED2022-34 CPM2022-59 LQE2022-67		 One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we eva... [more] ED2022-34 CPM2022-59 LQE2022-67
pp.49-52
ED, MW 2020-01-31
15:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation
Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) ED2019-103 MW2019-137		  [more] ED2019-103 MW2019-137
p.53
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] 2018-07-19
15:25		 Hokkaido   A Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement
Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29		  [more] EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29
pp.125-130
EA, US
(Joint)		 2017-01-25
10:30		 Kyoto Doshisha Univ. [Poster Presentation] HeLa cells manipulation in micro-channels using ultrasound
Ryota Yamamoto, Tomohiro Otsuka, Daisuke Koyama, Mami Matsukawa (Doshisha Univ.) US2016-79		  [more] US2016-79
pp.39-42
 Results 1 - 6 of 6  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan