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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-07-04
12:00		 Aichi VBL, Nagoya Univ. Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100)
Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-58		 To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer wi... [more] SDM2011-58
pp.47-50
SDM 2011-07-04
14:00		 Aichi VBL, Nagoya Univ. Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces
Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61		 We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] SDM2011-61
pp.63-68
SDM 2010-06-22
11:45		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures
Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-38		  [more] SDM2010-38
pp.27-32
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