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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2014-10-24 15:20 |
Nagano | Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate Takuo Kanou, Yoshiyuki Akahane, Yuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.)  CPM2014-109 |
Silicon dioxide films were deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) to form the MIS stru... [more] | CPM2014-109 pp.25-28 |
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| CPM | 2014-09-04 14:20 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Preparation of Plasma Nitridation Layer on SiC Surface and Examination of Its Thermal Stability Yoshiyuki Akahane, Takuo Kanou, Kouya Ogino, Yuuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2014-77 |
[more] | CPM2014-77 pp.13-16 |
| CPM | 2013-10-24 15:50 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Fabrication of Carbon Nanotubes by Thermal Chemical Vapor Deposition Using Alcohol as Carbon Source Naoki Kubo, Keisuke Yamada, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2013-98 |
Carbon nanotubes (CNTs) are studied in many fields due to their mechanical, thermal and chemical properties. In vacuum n... [more] | CPM2013-98 pp.27-30 |
| CPM | 2013-10-25 11:00 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Low temperature growth and structural characterization for SiC films by HWCVD using filaments coated with SiC Katsuya Abe, Hayato Ozawa, Tomohiko Yamakami (Shinshu Univ.) CPM2013-105 |
[more] | CPM2013-105 pp.59-62 |
| CPM | 2013-10-25 11:25 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Field Emission from the Cold-Cathode using CNTs Dispersed in Insulating Layer Yuji Asada, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2013-106 |
Field emission cathode was fabricated using the compound of carbon-nanotube and insulator. High field enhancement factor... [more] | CPM2013-106 pp.63-66 |
| CPM | 2012-10-27 09:10 |
Niigata | CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.) CPM2012-104 |
CuAlO2 film deposition was tried by reactive sputtering using Cu/Al targets prepared by cold spray method.The Cu/Al ta... [more] |
CPM2012-104 pp.61-64 |
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| CPM | 2012-10-27 11:25 |
Niigata | Field Emission Characteristics Considering both the Shield Effect and Series Resistance Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2012-109 |
To estimate the effects of series resistance on the field emission current associated with an array of carbon nanotubes ... [more] | CPM2012-109 pp.87-90 |
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| CPM | 2012-08-08 13:00 |
Yamagata | Growth pressure dependence of SiC films grown by HWCVD at low substrate temperature Katsuya Abe, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) CPM2012-33 |
[more] | CPM2012-33 pp.1-4 |
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| ED, SDM, CPM | 2012-05-18 10:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Low temperature crystallization of SiC films by metal induced growth technique Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) ED2012-30 CPM2012-14 SDM2012-32 |
[more] | ED2012-30 CPM2012-14 SDM2012-32 pp.63-66 |
| CPM | 2011-10-26 13:00 |
Fukui | Fukui Univ. | Structual characterization of CuAlO2 films deposited by reactive sputtering using composite target Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa, Tomohiko Yamakami, Katsuya Abe (SinshuUniv.) CPM2011-109 |
CuAlO2 films were prepared by reactive magnetron sputtering using Al-Cu hybrid targets and these structural properties ... [more] |
CPM2011-109 pp.1-4 |
| CPM | 2011-10-27 09:30 |
Fukui | Fukui Univ. | Growth of SiC films by HW-CVD using graphite filaments coated with SiC Yuya Sakaguchi, Ryohei Ushikusa, Takuu Syu, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ) CPM2011-118 |
Silicon carbide films were prepared on p-Si(001) and glass substrates by hot-wire chemical vapor deposition using grap... [more] |
CPM2011-118 pp.47-50 |
| CPM | 2011-10-27 09:55 |
Fukui | Fukui Univ. | Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] | CPM2011-119 pp.51-54 |
| CPM | 2011-08-10 13:50 |
Aomori | Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58 |
A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] | CPM2011-58 pp.11-14 |
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| CPM | 2010-10-29 09:25 |
Nagano | Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100 |
A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] | CPM2010-100 pp.47-50 |
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| CPM | 2010-10-29 09:50 |
Nagano | Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101 |
The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality f... [more] | CPM2010-101 pp.51-54 |
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| CPM | 2010-07-29 13:30 |
Hokkaido | Michino-Eki Shari Meeting Room | Fabrication of CuInO2 thin films using RF sputtering and studies of annealing effects Tsubasa Ogawa, Takuya Yokomoto, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ.) |
[more] | |
| CPM | 2010-07-30 10:55 |
Hokkaido | Michino-Eki Shari Meeting Room | Field Emission from Horizontally Aligned Carbon Nanotube Hirofumi Saito, Tomohiko Yamakami, Rinpei Hayashibe, Takumi Ooike, Masahiro Yamashita, Kiichi Kamimura (Shinshu Univ.) CPM2010-39 |
To estimate the field emission current associated with an array of carbon nanotubes (CNTs) parallel to a planar cathode ... [more] | CPM2010-39 pp.45-48 |
| CPM | 2009-10-29 15:50 |
Toyama | Toyama Prefectural University | Characterization of CuInO2 thin films grown by RF reactive sputtering Tsubasa Ogawa, Oki Kuraishi, Yoshitaka Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.) |
(To be available after the conference date) [more] | |
| CPM | 2009-10-29 16:15 |
Toyama | Toyama Prefectural University | Fabrication and Characterization of Cold Cathode using Carbon Nanotubes Dispersed in Insulator. Hirofumi Saito, Tatsuya Hagino, Junnki Matsumoto, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-93 |
Field emission cathode was fabricated using mixed compound of carbon nanotube and insulator. High field enhancement acto... [more] | CPM2009-93 pp.17-20 |
| CPM | 2009-08-10 15:30 |
Aomori | Hirosaki Univ. | Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer Shinichiro Suzuki, Akira Sengoku, Takuma Tsuji, Mitsunori Henmi, Yusuke Murata, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-35 |
Interface state density was estimated from diode factor $n$ of SiC MIS Schottky diode. The interface state density was t... [more] | CPM2009-35 pp.9-12 |
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