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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, CPM, LQE |
2006-10-05
16:35 |
Kyoto |
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Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method
Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.) |
[more] |
ED2006-160 CPM2006-97 LQE2006-64
pp.45-49 |
| ED, CPM, LQE |
2006-10-06
16:50 |
Kyoto |
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Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method
Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.) |
The problem of ECR-MBE method is to generate the N2+ ion from ECR plasma during growth that damages the film. The bad in... [more] |
ED2006-175 CPM2006-112 LQE2006-79
pp.121-125 |
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