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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2016-12-12
Nara NAIST Research and development of new rare metal-free AOS-TFT
Kenta Umeda, Yuta Kato, Daiki Nishimoto, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2016-12 SDM2016-93
 [more] EID2016-12 SDM2016-93
SDM, EID 2016-12-12
Nara NAIST Influence of Electrodes for Magnetoresistance Effect in IGZO Thin Film Devices
Asuka Fukawa, Ryuki Nomura, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-13 SDM2016-94
 [more] EID2016-13 SDM2016-94
SDM, EID 2016-12-12
Nara NAIST Characteristic Evaluation of GaSnO Thin Film by Hall Measurement
Kota Imanishi, Asuka hukawa, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2016-14 SDM2016-95
 [more] EID2016-14 SDM2016-95
EID, SDM 2015-12-14
Kyoto Ryukoku University, Avanti Kyoto Hall Characterization of GaxSn1-xO thin film by the mist CVD method
Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-16 SDM2015-99
Thin films of GaxSn1-xO (GTO) for an active layer of thin film transistor (TFT) were deposited with different substrate ... [more] EID2015-16 SDM2015-99
EID, SDM 2015-12-14
Kyoto Ryukoku University, Avanti Kyoto Hall Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor
Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] EID2015-20 SDM2015-103
 Results 1 - 5 of 5  /   
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