Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25 13:10 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] Yoshiya Abe, Kenta Yachida, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.), Hidenori Kawanishi, Mutsumi Kimura (Ryukoku Univ.) EID2023-3 |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] |
EID2023-3 pp.5-8 |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25 13:15 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Reproduction of changes in membrane potential of neurons by synaptic devices using memristors Kenta Yachida, Yoshiya Abe, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ./Ryukoku Univ.), Hidenori Kawanishi (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ./NAIST) EID2023-4 |
We attempted to replicate the changes in the membrane potential of neurons using thin-film neuromorphic devices that int... [more] |
EID2023-4 pp.9-12 |
SDM, EID, ITE-IDY [detail] |
2019-12-24 14:05 |
Nara |
NAIST |
Ga-Sn-O TFT fabricated on Al2O3 insulating film Kazuki Hattori, Kenta Tanino, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ), Toshiyuki Kawaharamura (Kochi Univ of Tech) |
[more] |
|
EID, SDM, ITE-IDY [detail] |
2018-12-25 11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method Yuta Takishita (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
EID, SDM, ITE-IDY [detail] |
2018-12-25 14:00 |
Kyoto |
|
UV annealing dependence analysis of Ga - Sn - O TFT characteristics Kenta Tanino, Ryo Takagi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
[more] |
|
EID, SDM, ITE-IDY [detail] |
2018-12-25 14:45 |
Kyoto |
|
Evaluation of Ga-Sn-O thin film thermoelectric conversion devise made by Mist CVD Tatsuya Aramaki, Ryuki Nomura, Yoku Ikeguchi, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
SDM, EID |
2017-12-22 13:15 |
Kyoto |
Kyoto University |
Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] |
EID2017-16 SDM2017-77 pp.23-28 |
SDM, EID |
2017-12-22 13:30 |
Kyoto |
Kyoto University |
Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78 |
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. Ho... [more] |
EID2017-17 SDM2017-78 pp.29-34 |
SDM, EID |
2017-12-22 15:00 |
Kyoto |
Kyoto University |
Characteristic Evaluation of GaSnO Thin Films deposited using Mist Chemical Vapor Deposition Ryugo Okamoto, Hiroki Fukushima (Ryukoku Univ), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ) EID2017-23 SDM2017-84 |
[more] |
EID2017-23 SDM2017-84 pp.63-66 |
SDM, EID |
2016-12-12 10:15 |
Nara |
NAIST |
Characterization of GaxSn1-xO thin film by the mist CVD method Hiroki Fukushima, Hiromasa Yuge, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.) EID2016-11 SDM2016-92 |
[more] |
EID2016-11 SDM2016-92 pp.11-14 |
SDM, EID |
2016-12-12 11:30 |
Nara |
NAIST |
Stimulus Performance of Thin-Film Biological Stimulation Devices Keisuke Tomioka, Kouhei Miyake, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-15 SDM2016-96 |
[more] |
EID2016-15 SDM2016-96 pp.27-30 |
SDM, EID |
2016-12-12 11:45 |
Nara |
NAIST |
Wireless power transmission using a thin film coil Yuuki Yamamoto, Keigo Misawa, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-16 SDM2016-97 |
[more] |
EID2016-16 SDM2016-97 pp.31-35 |
SDM, EID |
2016-12-12 16:00 |
Nara |
NAIST |
Letter Recognition of Cellar Neural Network using Thin Film Transistors Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-26 SDM2016-107 |
We are developing cellular neural networks using thin film transistors. We realized the neuron consisting of eight TFTs ... [more] |
EID2016-26 SDM2016-107 pp.75-79 |
SDM, EID |
2016-12-12 16:15 |
Nara |
NAIST |
Characterization of planar synapses with GTO thin films Keisuke Ikushima, Kenta Umeda, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-27 SDM2016-108 |
Neural networks are information processing models based on the human brain, and they have been activity studied.
Howeve... [more] |
EID2016-27 SDM2016-108 pp.81-84 |
SDM, EID |
2016-12-12 16:30 |
Nara |
NAIST |
Research of capacitor-type synapses in the hardware of the neural network Koki Watada, Hiroki Nakanishi, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.) EID2016-28 SDM2016-109 |
We are studying capacitor type synapses for the purpose of reducing power consumption when hardware of neural networks a... [more] |
EID2016-28 SDM2016-109 pp.85-88 |
SDM, EID |
2016-12-12 16:45 |
Nara |
NAIST |
Development of Synapses in Neural Networks using a-IGZO Thin Films Toshimasa Hori, Ryo Tanaka, Yuki Koga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-29 SDM2016-110 |
Neural networks are information processing models based on human brains, which have been actively studied. However, in o... [more] |
EID2016-29 SDM2016-110 pp.89-92 |
SDM, EID |
2016-12-12 17:00 |
Nara |
NAIST |
Analog circuit simulation of cellular neural network Tomoharu Yokoyama, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ) EID2016-30 SDM2016-111 |
[more] |
EID2016-30 SDM2016-111 pp.93-97 |
SDM, OME |
2016-04-09 10:50 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] |
SDM2016-14 OME2016-14 pp.57-60 |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28 14:10 |
Toyama |
Toyama Univ. |
Cellar Neural Network using Thin-Film Devices
-- Operation Confirmation of Letter Recognition -- Mutsumi Kimura, Ryohei Morita, Sumio Sugisaki, Tokiyoshi Matsuda (Ryukoku Univ.) EID2015-28 |
We are developing cellular neural networks using thin-film devices. Because thin-film devices can be fabricated on large... [more] |
EID2015-28 pp.21-24 |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28 14:18 |
Toyama |
Toyama Univ. |
Artificial Retina using Thin-Film Devices
-- Operation Confirmation by in vitro Experiment -- Mutsumi Kimura, Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda (Ryukoku Univ.) EID2015-29 |
We are developing artificial retinas using thin-film devices. Because thin-film devices can be fabricated on transparent... [more] |
EID2015-29 pp.25-28 |