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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2018-04-20
11:10		 Tokyo   [Invited Talk] A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology
Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC) ICD2018-10		 A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] ICD2018-10
pp.39-44
ICD 2011-04-18
13:30		 Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] Technology Trend of NAND Flash Memories -- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology --
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) ICD2011-4		 A 64Gbit 2bit/cell NAND flash memory capable of 14MB/s programming and 266MB/s data transfer is fabricated in 24nm techn... [more] ICD2011-4
pp.19-26
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