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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2012-10-26 17:05 |
Niigata |
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Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) CPM2012-101 |
GaP layers were grown on Si substrates 2° or 4°-misoriented toward (011) using metalorganic vapor phase epitaxy. The sub... [more] |
CPM2012-101 pp.45-48 |
CPM |
2012-08-08 14:15 |
Yamagata |
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Influence of Si surface annealing on GaP on Si substrates using metalorganic vapor phase epitaxy Tatsuya Takagi, Ryo Miyahara, Yohsuke Horie, Yasushi Takano (Shizuoka Univ.) CPM2012-36 |
GaP layers were grown on Si substrates using metalorganic vapor phase epitaxy. In order to suppress APD generation, Si(1... [more] |
CPM2012-36 pp.17-20 |
ED, SDM, CPM |
2012-05-17 14:55 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) ED2012-21 CPM2012-5 SDM2012-23 |
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. GaP was deposited a... [more] |
ED2012-21 CPM2012-5 SDM2012-23 pp.19-23 |
CPM, SDM, ED |
2011-05-19 16:05 |
Aichi |
Nagoya Univ. (VBL) |
Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) ED2011-15 CPM2011-22 SDM2011-28 |
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented sub... [more] |
ED2011-15 CPM2011-22 SDM2011-28 pp.71-75 |
SDM, CPM, ED |
2010-05-14 13:55 |
Shizuoka |
Shizuoka University (Hamamatsu Campus) |
Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) ED2010-31 CPM2010-21 SDM2010-31 |
GaP layers were grown on 4° misoriented Si substrates at 700-830°C using metalorganic vapor phase epitaxy. The surface a... [more] |
ED2010-31 CPM2010-21 SDM2010-31 pp.75-79 |
ED, CPM, SDM |
2009-05-15 10:30 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Growth of GaP on Si Substrates at High Temperature by MOVPE Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) ED2009-29 CPM2009-19 SDM2009-19 |
GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800℃,no mirror suf... [more] |
ED2009-29 CPM2009-19 SDM2009-19 pp.59-64 |
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