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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2012-10-26
17:05
Niigata   Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy
Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) CPM2012-101
GaP layers were grown on Si substrates 2° or 4°-misoriented toward (011) using metalorganic vapor phase epitaxy. The sub... [more] CPM2012-101
pp.45-48
CPM 2012-08-08
14:15
Yamagata   Influence of Si surface annealing on GaP on Si substrates using metalorganic vapor phase epitaxy
Tatsuya Takagi, Ryo Miyahara, Yohsuke Horie, Yasushi Takano (Shizuoka Univ.) CPM2012-36
GaP layers were grown on Si substrates using metalorganic vapor phase epitaxy. In order to suppress APD generation, Si(1... [more] CPM2012-36
pp.17-20
ED, SDM, CPM 2012-05-17
14:55
Aichi VBL, Toyohashi Univ. of Technol. Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy
Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) ED2012-21 CPM2012-5 SDM2012-23
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. GaP was deposited a... [more] ED2012-21 CPM2012-5 SDM2012-23
pp.19-23
CPM, SDM, ED 2011-05-19
16:05
Aichi Nagoya Univ. (VBL) Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) ED2011-15 CPM2011-22 SDM2011-28
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented sub... [more] ED2011-15 CPM2011-22 SDM2011-28
pp.71-75
SDM, CPM, ED 2010-05-14
13:55
Shizuoka Shizuoka University (Hamamatsu Campus) Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) ED2010-31 CPM2010-21 SDM2010-31
GaP layers were grown on 4° misoriented Si substrates at 700-830°C using metalorganic vapor phase epitaxy. The surface a... [more] ED2010-31 CPM2010-21 SDM2010-31
pp.75-79
ED, CPM, SDM 2009-05-15
10:30
Aichi Satellite Office, Toyohashi Univ. of Technology Growth of GaP on Si Substrates at High Temperature by MOVPE
Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) ED2009-29 CPM2009-19 SDM2009-19
GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800℃,no mirror suf... [more] ED2009-29 CPM2009-19 SDM2009-19
pp.59-64
 Results 1 - 6 of 6  /   
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