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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-10-23
13:00		 Fukuoka Kyushu Institute of Technology Crystalline Recovery and Point Defects Re-arrangement during Activation Annealing of Implanted SiC Crystal
Ryo Hattori, Tomokatsu Watanabe, Hiroaki Sumitani, Tatsuo Oomori (Mitsubishi Electric Corp.), Takeshi Mitani (TRC) ED2008-146		  [more] ED2008-146
pp.127-132
SDM 2006-06-21
13:00		 Hiroshima Faculty Club, Hiroshima Univ. Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) 		Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid... [more] SDM2006-42
pp.1-5
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