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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152		 We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] ED2012-122 MW2012-152
pp.53-56
ED, MW 2012-01-12
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160		  [more] ED2011-137 MW2011-160
pp.101-105
LQE, ED, CPM 2011-11-17
16:05		 Kyoto Katsura Hall，Kyoto Univ. High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107		 GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] ED2011-84 CPM2011-133 LQE2011-107
pp.55-60
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