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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-06-21
16:40
Aichi Nagoya Univ. VBL3F [Invited Talk] Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech) SDM2022-30
 [more] SDM2022-30
pp.23-26
SDM 2020-11-20
11:30
Online Online [Invited Talk] Three-dimensional device simulation of Si IGBTs -- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30
 [more] SDM2020-30
pp.36-40
SDM 2019-11-08
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] SDM2019-77
pp.45-48
SDM, ICD, ITE-IST [detail] 2019-08-08
10:25
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Lecture] 3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7
 [more] SDM2019-42 ICD2019-7
pp.31-34
SDM 2019-06-21
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] SDM2019-30
pp.23-27
SDM 2019-01-29
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] SDM2018-90
pp.39-44
SDM 2017-06-20
15:15
Tokyo Campus Innovation Center Tokyo Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27
 [more] SDM2017-27
pp.31-34
SDM 2010-06-22
14:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces
Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] SDM2010-42
pp.49-54
 Results 1 - 8 of 8  /   
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