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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT)  ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| SDM | 2022-06-21 16:40 |
Aichi | Nagoya Univ. VBL3F | [Invited Talk]
Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech) SDM2022-30 |
[more] | SDM2022-30 pp.23-26 |
| SDM | 2020-11-20 11:30 |
Online | Online | [Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements -- Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
[more] | SDM2020-30 pp.36-40 |
| SDM | 2019-11-08 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] | SDM2019-77 pp.45-48 |
| SDM, ICD, ITE-IST [detail] | 2019-08-08 10:25 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | [Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] | SDM2019-42 ICD2019-7 pp.31-34 |
| SDM | 2019-06-21 14:30 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] | SDM2019-30 pp.23-27 |
| SDM | 2019-01-29 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] | SDM2018-90 pp.39-44 |
| ED, MW | 2018-01-25 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165 |
(To be available after the conference date) [more] | ED2017-96 MW2017-165 pp.15-18 |
| SDM | 2017-06-20 15:15 |
Tokyo | Campus Innovation Center Tokyo | Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27 |
[more] | SDM2017-27 pp.31-34 |
| LQE, OPE, OCS | 2016-10-28 11:30 |
Miyazaki | Miyazaki Citizen's Plaza | High-speed avalanche photodiode for 56-Gbit/s 40-km transmission Masahiro Nada, Takuya Hoshi, Hideaki Matsuzaki (NTT) OCS2016-50 OPE2016-91 LQE2016-66 |
(Advance abstract in Japanese is available) [more] | OCS2016-50 OPE2016-91 LQE2016-66 pp.87-90 |
| RCS, IT, SIP | 2016-01-19 10:35 |
Osaka | Kwansei Gakuin Univ. Osaka Umeda Campus | A Study on Beamforming Control Based on Firefly Algorithm Takuya Hoshino, Kenichi Higuchi (Tokyo Univ. of Science) IT2015-85 SIP2015-99 RCS2015-317 |
Beamforming (BF) is essential to achieve a throughput gain by using Massive multiple-input multiple-output (MIMO). Howev... [more] | IT2015-85 SIP2015-99 RCS2015-317 pp.203-206 |
| RCS | 2015-06-26 10:21 |
Hokkaido | Hokkaido Univ. | Performance Comparison of Random Beamforming and Codebook-Based Beamforming in Cellular Downlink with Massive MIMO Takuya Hoshino, Kenichi Higuchi (Tokyo Univ. of Science) RCS2015-89 |
This paper compares the throughput levels of random beamforming (RB) and codebook-based beamforming (CBBF) in cellular d... [more] | RCS2015-89 pp.253-256 |
| LQE, OPE | 2015-06-19 16:15 |
Tokyo | High-linearity avalanche photodiode and its application for 28Gbaud PAM4 operation Masahiro Nada, Takuya Hoshi, Hirofumi Yamazaki, Haruki Yokoyama, Toshikazu Hashimoto, Hideaki Matsuzaki (NTT) OPE2015-19 LQE2015-29 |
We present a unique configuration of high-speed avalanche photodiode (APD) for ensuring high linearity. The APD exhibits... [more] | OPE2015-19 LQE2015-29 pp.43-46 |
|
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| SDM | 2010-06-22 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] | SDM2010-42 pp.49-54 |
| EMCJ | 2006-12-15 11:20 |
Aichi | Nagoya Institute of Technology | A Study on Adaptive Delay Control Scheme-based Active Noise Filter for Protection of Electromagnetic Interference Problems Yasunao Suzuki (NTT), Takuya Hoshino, Masashi Takabe, Mitsuo Hattori (NTT-AT), Masao Masugi (NTT) EMCJ2006-86 |
This paper proposes a method of adjusting output signal delays of the active noise filter for electromagnetic interferen... [more] | EMCJ2006-86 pp.31-34 |
| EMCJ, MW | 2004-10-28 - 2004-10-29 |
Iwate | Results of the comparison between the conventional and the using normalized site attenuation method for shielding effectiveness measurement Takuya Hoshino, Mamoru Sato (NTT AT), Masaharu Sao, Tetsuya Tominaga (NTT) |
The transmission loss method of the IEEE std.299-1997 and the insertion loss method of the IEC TS 61587-3 are widely use... [more] | ||
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