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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-06-21 13:00 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] |
SDM2022-24 pp.1-4 |
SDM |
2018-06-25 15:35 |
Aichi |
Nagoya Univ. VBL3F |
Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23 |
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] |
SDM2018-23 pp.33-36 |
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