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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 16:40 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Control and application of contactless photoelectrochemical (CL-PEC) etching for AlGaN/GaN heterostructures Yugo Oki, Naoki Shiozawa, Takuya Togashi, Taketomo Sato (Hokkaido Univ.) |
(To be available after the conference date) [more] | |
| CPM, ED, SDM | 2023-05-19 16:30 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.)  ED2023-7 CPM2023-7 SDM2023-24 |
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] | ED2023-7 CPM2023-7 SDM2023-24 pp.28-31 |
| SDM, ED, CPM | 2022-05-27 16:15 |
Online | Online | Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials Taketomo Sato, Masachika Toguchi (Hokkaido Univ.) ED2022-13 CPM2022-7 SDM2022-20 |
A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive i... [more] | ED2022-13 CPM2022-7 SDM2022-20 pp.25-28 |
| ED, CPM, LQE | 2021-11-26 16:00 |
Online | Online | Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46 |
(To be available after the conference date) [more] | ED2021-34 CPM2021-68 LQE2021-46 pp.87-90 |
| ED, CPM, LQE | 2021-11-26 16:25 |
Online | Online | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] | ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| LQE, CPM, ED | 2017-11-30 15:50 |
Aichi | Nagoya Inst. tech. | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] | ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
| CPM, LQE, ED | 2016-12-12 17:00 |
Kyoto | Kyoto University | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] | ED2016-66 CPM2016-99 LQE2016-82 pp.45-50 |
| ED | 2015-08-04 12:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electrochemical formation and UV photoresponse properties of GaN porous structures Hirofumi Kida, Yusuke Kumazaki, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-53 |
Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and sp... [more] | ED2015-53 pp.51-54 |
| ED, CPM, SDM | 2015-05-29 09:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-28 CPM2015-13 SDM2015-30 |
[more] | ED2015-28 CPM2015-13 SDM2015-30 pp.63-66 |
| CPM, LQE, ED | 2013-11-29 16:15 |
Osaka | Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-88 CPM2013-147 LQE2013-123 |
Optical properties of GaN porous structures formed by the electrochemical process were investigated. We conducted the ph... [more] | ED2013-88 CPM2013-147 LQE2013-123 pp.113-116 |
|
| SDM, ED, CPM | 2013-05-17 11:20 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by the Electrochemical process Yusuke Kumazaki, Ryohei Jinbo, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-27 CPM2013-12 SDM2013-34 |
We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using p... [more] | ED2013-27 CPM2013-12 SDM2013-34 pp.61-64 |
| ED, SDM | 2010-06-30 16:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Electrochemical formation of InP porous structures for their application to photoelectric conversion devices Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ) ED2010-71 SDM2010-72 |
[more] | ED2010-71 SDM2010-72 pp.85-89 |
| ED | 2010-06-17 13:50 |
Ishikawa | JAIST | Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2010-35 |
(To be available after the conference date) [more] | ED2010-35 pp.11-15 |
| SDM, ED | 2009-06-25 11:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Formation and application of InP porous structures on p-n substrates Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71 |
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-dens... [more] | ED2009-76 SDM2009-71 pp.117-120 |
| SDM, ED | 2008-07-11 15:50 |
Hokkaido | Kaderu２・７ | Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.) ED2008-102 SDM2008-121 |
We investigated the electrocatalytic activity of n-type InP porous nanostructures and the feasibility of their functiona... [more] | ED2008-102 SDM2008-121 pp.327-330 |
| ED, SDM | 2007-06-25 15:05 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Electrochemical formation and sensor application of InP porous nanostructures Taketomo Sato, Toshiyuki Fujino, Tamotsu Hashizume (Hokkaido Univ.) |
A two-step electrochemical process was developed to form high-density array of InP porous nanostructures. By the subsequ... [more] | |
| LQE, ED, CPM | 2005-10-13 17:20 |
Shiga | Ritsumeikan Univ. | Formation of AlGaN/GaN nano wire network using selective RF-MBE Takeshi Oikawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] | ED2005-137 CPM2005-124 LQE2005-64 pp.89-92 |
| LQE, ED, CPM | 2005-10-14 13:00 |
Shiga | Ritsumeikan Univ. | Liquid sensor using gateless AlGaN/GaN HEMT structure Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] | ED2005-147 CPM2005-134 LQE2005-74 pp.39-42 |
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