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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-02-04
09:05
Online Online [Invited Talk] Quantitative evaluation on barrier property of ultra-thin PVD-Co(W) films using lag-time method
Takeshi Momose, Taewoong Kim, Yubin Deng, Momoko Deura (UTokyo), Akira Matsuo, Nobuo Yamaguchi (CANON ANELVA), Yukihiro Shimogaki (UTokyo) SDM2021-74
For the development of ultra-thin barrier layers for Cu interconnections in ultra large scale integration, it is essenti... [more] SDM2021-74
pp.1-4
SDM 2016-01-22
13:55
Tokyo Sanjo Conference Hall, The University of Tokyo Fabrication of highly reliable Co(W) thin film by physical vapor deposition for next generation ULSI Cu interconnects
Taewoong Kim, Kouta Tomita, Takeshi Momose (Univ. of Tokyo), Takaaki Tsunoda, Takayuki Moriwaki (CANON ANELVA), Yukihiro Shimogaki (Univ. of Tokyo) SDM2015-114
 [more] SDM2015-114
pp.25-28
SDM 2015-03-02
15:25
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Sub-nanoscale Structure and Barrier Performance of CVD-Cu(Mn)/ALD-Co(W) Interconnect System Proved Using 3D Atom Probe
Kohei Shima (The Univ. of Tokyo), Yuan Tu, Bin Han, Hisashi Takamizawa (Tohoku Univ.), Hideharu Shimizu (The Univ. of Tokyo), Yasuo Shimizu (Tohoku Univ.), Takeshi Momose (The Univ. of Tokyo), Koji Inoue, Yasuyoshi Nagai (Tohoku Univ.), Yukihiro Shimogaki (The Univ. of Tokyo) SDM2014-169
We propose new materials system of a single layered Co(W) barrier/liner layer coupled with a Cu(Mn) alloy seed layer for... [more] SDM2014-169
pp.39-44
SDM 2012-03-05
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect
Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.) SDM2011-180
The effective resistivity of interconnects are predicted to be increased by ULSI shrinking. Barrier/liner layer formed o... [more] SDM2011-180
pp.25-29
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