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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-06-22 12:05 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms DongHun Lee, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2010-39 |
Germanium (Ge) is highlighted as a candidate semiconductor of high speed transistor because of its higher carrier mobili... [more] |
SDM2010-39 pp.33-37 |
ED |
2009-07-31 10:40 |
Osaka |
Osaka Univ. Icho-Kaikan |
Fabrication of Multi-axis Tactile Sensor for Future Robots by Using Microelectromechanical Systems Masayuki Sohgawa, Takeshi Kanashima (Osaka Univ.), Kaoru Yamashita, Minoru Noda (Kyoto Inst. Tech.), Masanori Okuyama (Osaka Univ.), Haruo Noma (ATR) ED2009-110 |
Tactile array sensors with macro-cantilevers embedded in elastomer which can detect both normal and shear stresses have ... [more] |
ED2009-110 pp.41-46 |
SDM |
2009-06-19 13:40 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] |
SDM2009-34 pp.45-50 |
SDM |
2008-12-05 16:10 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] |
SDM2008-195 pp.59-64 |
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