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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2022-08-04 13:30 |
Hokkaido |
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[Invited Talk]
First approach to producing vaccines from plants
-- Hydroponic culture of Nicotiana benthamiana -- Mayumi B. Takeyama (WOW Tokyo Tech../Kitami Inst. Technol.), Hikaru Murakami, Masaru Sato (Kitami Inst.Technol.), Shiho Torashima, Koji Kashima, Takayuki Ohba (WOW Tokyo Tech.) CPM2022-11 |
[more] |
CPM2022-11 pp.1-2 |
SDM |
2021-02-05 16:40 |
Online |
Online |
[Invited Talk]
Bumpless Build Cube (BBCube) using Wafer-on-Wafer (WOW) Technology with 3D Redundancy Scheme Shinji Sugatani, Norio Chujo, Koji Sakui, Hiroyuki Ryoson, Tomoji Nakamura, Takayuki Ohba (Titech) SDM2020-61 |
An application of vertically replaceable memory block architecture
scheme hereinafter referred to as “3D redundancy” fo... [more] |
SDM2020-61 pp.27-32 |
CPM |
2019-11-07 13:30 |
Fukui |
Fukui univ. |
Development of Methods for Early Detection of Plant Growth Disorder by Hyper/Multispectral Camera under Artificial Light Koji Kashima, Shiho Torashima, Hiroyuki Ito, Katsuro Fukozu, Takayuki Ohba (Tokyo Tech) |
[more] |
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SDM |
2014-02-28 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration Yoriko Mizushima (Fujitsu Lab./Tokyo Inst. of Tech.), Youngsuk Kim (Tokyo Inst. of Tech./Disco), Tomoji Nakamura (Fujitsu Lab.), Ryuichi Sugie, Hideki Hashimoto (Toray Research Center), Akira Uedono (Univ. of Tsukuba), Takayuki Ohba (Tokyo Inst. of Tech.) SDM2013-167 |
Ultra-thin wafer is indispensable for bumpless 3D stacking. To know the thinning damage in detail, an atomic level defec... [more] |
SDM2013-167 pp.13-18 |
SDM, ICD |
2013-08-01 13:00 |
Ishikawa |
Kanazawa University |
[Invited Talk]
Tera-Scale Three-Dimensional Integration (3DI) using Bumpless TSV Interconnects Takayuki Ohba (Tokyo Inst. of Tech.) SDM2013-70 ICD2013-52 |
In combination with 3D logic, memory, and cooling devices, it is possible to construct a roadmap towards high-density in... [more] |
SDM2013-70 ICD2013-52 pp.29-30 |
SDM, ICD |
2013-08-01 15:40 |
Ishikawa |
Kanazawa University |
[Panel Discussion]
3D Integration: What and when do we expect? Kazuya Masu (Tokyo Inst. of Tech.), Hiroaki Ikeda (ASET), Makoto Nagata (Kobe Univ), Kenji Takahashi (Toshiba), Takayuki Ohba (Tokyo Inst. of Tech.), Daisuke Suzuki (Pezy Computing) SDM2013-73 ICD2013-55 |
[more] |
SDM2013-73 ICD2013-55 p.41 |
SDM |
2012-03-05 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects Hideki Kitada (Univ. of Tokyo/Fujitsu Lab.), Nobuhide Maeda, Koji Fujimoto, Shoichi Kodama, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima (Univ. of Tokyo/Fujitsu Lab.), Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo) SDM2011-183 |
[more] |
SDM2011-183 pp.41-46 |
SDM |
2012-03-05 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184 |
We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer appli... [more] |
SDM2011-184 pp.47-52 |
SDM |
2011-02-07 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) SDM2010-224 |
Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vap... [more] |
SDM2010-224 pp.49-53 |
ICD, SDM |
2010-08-27 10:15 |
Hokkaido |
Sapporo Center for Gender Equality |
[Invited Talk]
Development of sub-10um Thinning Technology using Actual Device Wafers Nobuhide Maeda, Kim Youngsuk (Univ. of Tokyo), Yukinobu Hikosaka, Takashi Eshita (FSL), Hideki Kitada, Koji Fujimoto (Univ. of Tokyo), Yoriko Mizushima (Fujitsu Labs.), Kousuke Suzuki (DNP), Tomoji Nakamura (Fujitsu Labs.), Akihito Kawai, Kazuhisa Arai (DISCO), Takayuki Ohba (Univ. of Tokyo) SDM2010-141 ICD2010-56 |
200-mm and 300-mm device wafers were successfully thinned down to less than 10-μm. A 200-nm non-crystalline layer remain... [more] |
SDM2010-141 ICD2010-56 pp.95-97 |
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