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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-06-21 14:30 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] |
SDM2019-30 pp.23-27 |
SDM |
2012-10-25 15:20 |
Miyagi |
Tohoku Univ. (Niche) |
Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2012-89 |
[more] |
SDM2012-89 pp.1-4 |
SDM |
2012-10-25 15:45 |
Miyagi |
Tohoku Univ. (Niche) |
AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) SDM2012-90 |
(To be available after the conference date) [more] |
SDM2012-90 pp.5-9 |
SDM |
2012-06-21 15:05 |
Aichi |
VBL, Nagoya Univ. |
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] |
SDM2012-56 pp.69-74 |
SDM |
2012-03-05 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Initial Growth Observation of Multilayer Graphene on SiO2/Si substrate using Raman Spectroscopy and XPS Yoshihiro Ojiro, Shuichi Ogawa (Tohoku Univ.), Manabu Inukai (JASRI), Motonobu Sato (AIST), Eiji Ikenaga, Takayuki Muro (JASRI), Mizuhisa Nihei (AIST), Yuji Takakuwa (Tohoku Univ.), Naoki Yokoyama (AIST) SDM2011-179 |
The photoemission-assisted Plasma enhanced CVD is the one of the most possible method to grow graphene in the low temper... [more] |
SDM2011-179 pp.19-24 |
SDM |
2011-10-21 10:15 |
Miyagi |
Tohoku Univ. (Niche) |
Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2011-105 |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] |
SDM2011-105 pp.49-52 |
SDM |
2010-10-22 14:50 |
Miyagi |
Tohoku University |
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] |
SDM2010-167 pp.61-65 |
SDM |
2009-10-30 15:45 |
Miyagi |
Tohoku University |
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] |
SDM2009-134 pp.77-80 |
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