| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, LQE, ED | 2016-12-13 10:55 |
Kyoto | Kyoto University | Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic)  ED2016-72 CPM2016-105 LQE2016-88 |
AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) with emission wavelength of 270 - 280 nm have been attra... [more] | ED2016-72 CPM2016-105 LQE2016-88 pp.75-78 |
| CPM, LQE, ED | 2013-11-29 13:30 |
Osaka | Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117 |
High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] | ED2013-82 CPM2013-141 LQE2013-117 pp.83-86 |
|
| LQE, ED, CPM | 2011-11-18 12:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) ED2011-93 CPM2011-142 LQE2011-116 |
We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] | ED2011-93 CPM2011-142 LQE2011-116 pp.103-106 |
| LQE, ED, CPM | 2011-11-18 13:35 |
Kyoto | Katsura Hall，Kyoto Univ. | Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 |
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] | ED2011-95 CPM2011-144 LQE2011-118 pp.113-116 |
| LQE, ED, CPM | 2008-11-27 17:40 |
Aichi | Nagoya Institute of Technology | 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112 |
250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] | ED2008-168 CPM2008-117 LQE2008-112 pp.77-82 |
| LQE, ED, CPM | 2008-11-28 09:00 |
Aichi | Nagoya Institute of Technology | 280nm-band InAlGaN-based high-power deep-UV LEDs Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) ED2008-169 CPM2008-118 LQE2008-113 |
Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-e... [more] | ED2008-169 CPM2008-118 LQE2008-113 pp.83-88 |
| CPM, ED, LQE | 2007-10-11 15:45 |
Fukui | Fukui Univ. | 340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN) ED2007-161 CPM2007-87 LQE2007-62 |
[more] | ED2007-161 CPM2007-87 LQE2007-62 pp.29-34 |
| LQE, ED, CPM | 2005-10-14 15:10 |
Shiga | Ritsumeikan Univ. | Obserbation of high internal quantum efficiency from 330nm-band InAlGaN quantum wells Hideki Hirayama, Takayoshi Takano, Tomoaki Ohashi, Sachie Fujikawa (RIKEN), Norihiko Kamata (Saitama Univ.), Yukihiro Kondo (RIKEN) |
[more] | ED2005-153 CPM2005-140 LQE2005-80 pp.67-72 |
[Return to Top Page]