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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| R | 2009-11-20 14:45 |
Osaka | Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.)  R2009-43 |
[more] | R2009-43 pp.11-16 |
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| ED | 2009-06-11 16:25 |
Tokyo | Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] | ED2009-42 pp.31-36 |
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| SDM, ED | 2008-07-11 09:50 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Millimeter-wave MMIC Technologies for F-band Application Toshihiko Kosugi, Akihiko Hirata, Koichi Murata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki (NTT) ED2008-77 SDM2008-96 |
We describe ICs and their waveguide modules for F-band wireless communications and imaging systems. InP-HEMTs and a cop... [more] | ED2008-77 SDM2008-96 pp.199-204 |
| ED | 2007-06-15 16:15 |
Toyama | Toyama Univ. | MOVPE growth of high-quality InP-based resonant tunneling diodes Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38 |
InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organ... [more] | ED2007-38 pp.39-43 |
| MW, ED | 2007-01-19 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs Hideki Kamitsuna (NTT), Yasuro Yamane (NEL), Masami Tokumitsu (NTT), Hirohiko Sugahara (NTT-AT), Takatomo Enoki (NTT) |
An 8x8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low Ron・Coff product enable us to... [more] |
ED2006-230 MW2006-183 pp.167-171 |
| ED | 2006-12-08 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Millimeter-wave MMIC Technology for 120-GHz Wireless Application Toshihiko Kosugi, Masami Tokumitsu, Koichi Murata, Takatomo Enoki (NTT Photonics Lab.), Tadao Nagatsuma (NTT Micro System Integration Lab.) |
[more] | |
| OPE, LQE, OCS | 2006-10-13 16:10 |
Fukuoka | Kyusyu Univ. Chikushi Campus | Optical Response of InP-based HEMT and its Applications to High-Speed Photo-Detector and Converter Noriyo Kobayashi, Hiroshi Murata (Osaka Univ.), Toshihiko Kosugi, Takatomo Enoki (NTT), Yasuyuki Okamura (Osaka Univ.) OCS2006-60 OPE2006-113 LQE2006-102 |
Optical response and optical mixing in millimeter-wave transistors has studied. We measured the changes in the characte... [more] | OCS2006-60 OPE2006-113 LQE2006-102 pp.103-108 |
| RCS, AP, WBS, SR, MW, MoNA (Joint) |
2006-03-03 13:00 |
Kanagawa | YRP | 0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC Kenjiro Nishikawa, Takatomo Enoki, Suehiro Sugitani, Ichihiko Toyoda (NTT) |
This paper demonstrates the low-power operation of an InP HEMT 60-GHz band low-noise amplifier (LNA) MMIC. The device us... [more] | MW2005-180 pp.13-18 |
| ED, MW | 2006-01-18 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.) |
[more] | ED2005-194 MW2005-148 pp.13-18 |
| R, ED, SDM | 2005-11-25 14:25 |
Osaka | Central Electric Club | Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2 Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) |
[more] | R2005-43 ED2005-178 SDM2005-197 pp.31-35 |
| OCS, OPE, LQE | 2005-11-03 17:25 |
Fukuoka | 100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] | OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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| MW, ED | 2005-01-18 09:45 |
Tokyo | - Narihiko Maeda, -, Takashi Makimura, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (NTT) |
[more] | ED2004-213 MW2004-220 pp.7-12 |
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