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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2007-08-24
11:35
Hokkaido Kitami Institute of Technology An analysis of asymmetry and orientation dependence of n-MOSFETs
Toshihiro Matsuda, Yuya Sugiyama, Hideyuki Iwata (Toyama Pref. Univ.), Takashi Ohzone (Okayama Pref. Univ.) SDM2007-161 ICD2007-89
n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry of IDsat... [more] SDM2007-161 ICD2007-89
pp.113-116
ICD, SDM 2006-08-18
09:00
Hokkaido Hokkaido University A Test Structure to Separately Analyze CMOSFET Reliabilities along The Channel Width
Takashi Ohzone, Eiji Ishii, Takayuki Morishita, Kiyotaka Komoku (Okayama Pref. Univ.), Toshihiro Matsuda, Hideyuki Iwata (Toyama Pref. Univ.)
A test structure with four kinds of MOSFETs(i.e., [A]([D]) with a short(long) channel-length all over the channel width,... [more] SDM2006-142 ICD2006-96
pp.99-104
ICD, SDM 2005-08-18
13:50
Hokkaido HAKODATE KOKUSAI HOTEL A Test Structure to Analyze (Highly-Doped)/(Lightly-Doped)-Drain in LDD-type CMOSFET
Takashi Ohzone (Okayama Pref. Univ.), Toshihiro Matsuda (Toyama Pref. Univ.), Kazuhiko Okada, Takayuki Morishita, Kiyotaka Komoku (Okayama Pref. Univ.), Hideyuki Iwata (Toyama Pref. Univ.)
A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly- doped-drain (LDD) in L... [more] SDM2005-137 ICD2005-76
pp.55-60
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