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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-01-31 12:35 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST)  SDM2023-74 |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] | SDM2023-74 pp.1-4 |
| OFT | 2017-05-25 16:50 |
Shimane | Shimane Univ. (Matsue campus) | [Poster Presentation]
Newly developed 1.7 μm band external cavity laser and its application to evaluation of ethanol concentration in rice wines Akihiro Maeda, Yuma Honda (Osaka Pref. Univ.), Jun Ono (Anritsu Devices), Tatsuro Endo, Xiaoen Du, Fumiki Hanafuji (Osaka Pref. Univ.), Mao-Chieh Hsu (EZconn Corp.), Hiroshi Mori, Takashi Nakayama (Anritsu), Osanori Koyama, Makoto Yamada (Osaka Pref. Univ.) OFT2017-15 |
We developed a 1.7 μm band external cavity laser that can supply an output power of over 0 dBm in the 1650 to 1740 nm wa... [more] | OFT2017-15 pp.67-70 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| SDM | 2013-06-18 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Schottky Barrier Height and spin polarization of Fe3Si/Ge Interfaces; First-Principles Study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2013-51 |
[more] | SDM2013-51 pp.39-42 |
| SDM | 2012-06-21 14:15 |
Aichi | VBL, Nagoya Univ. | Relation between Schottky-barrier change and structural disorders at metal/(Si,Ge) interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2012-54 |
[more] | SDM2012-54 pp.59-62 |
| SDM | 2011-07-04 14:20 |
Aichi | VBL, Nagoya Univ. | Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2011-62 |
Schottky-barrier changes by the structural disorders are studied using the first-principles calculations and adopting Au... [more] | SDM2011-62 pp.69-73 |
| MBE | 2011-06-17 11:20 |
Hokkaido | Hokkaido University | Study on the the classification of the center of the pressure during walking Tomokazu Muto, Keio Ishiguro, Takashi Nakayama (Tokyo Univ of Tech), Naoaki Itakura (The Univ of Elec-Comm) |
(To be available after the conference date) [more] | |
| SDM | 2010-06-22 11:25 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Schottky-barrier modulation by segregation layers at metal/Si interfaces: first-principles study on chemical trend Kyosuke Kobinata, Yusuke Maruta, Takashi Nakayama (Chiba Univ.) SDM2010-37 |
(To be available after the conference date) [more] | SDM2010-37 pp.23-26 |
| SDM | 2009-06-19 16:55 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Theoretical investigation about electronic structure of doping metal silicide Shinichi Sotome, Takashi Nakayama (Chiba Univ) SDM2009-43 |
[more] | SDM2009-43 pp.93-97 |
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