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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2013-02-27 16:55 |
Hokkaido | Hokkaido Univ. | Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.)  ED2012-135 SDM2012-164 |
Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] | ED2012-135 SDM2012-164 pp.39-42 |
| SDM, ED (Workshop) |
2012-06-29 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Carbon nanotube-based plastic electronics Yutaka Ohno (Nagoya Univ., Aalto Univ.), Dong-ming Sun, Kentaro Higuchi (Nagoya Univ.), Marina Y. Timmermans, Antti Kaskela, Albert G. Nasibulin (Aalto Univ.), Shigeru Kishimoto (Nagoya Univ.), Esko I. Kauppinen (Aalto Univ.), Takashi Mizutani (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-29 12:00 |
Okinawa | Okinawa Seinen-kaikan | Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes Masaki Inagaki, Kensuke Hata, Kazunari Shiozawa, Yasumitsu Miyata, Yutaka Ohno, Shigeru Kishimoto, Hisanori Shinohara, Takashi Mizutani (Nagoya Univ.) |
[more] | |
| ED, SDM | 2012-02-08 13:25 |
Hokkaido | Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 |
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] | ED2011-156 SDM2011-173 pp.83-87 |
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| CPM, SDM, ED | 2011-05-20 17:30 |
Aichi | Nagoya Univ. (VBL) | Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49 |
We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical pr... [more] | ED2011-36 CPM2011-43 SDM2011-49 pp.185-190 |
| SDM, ED | 2011-02-23 16:05 |
Hokkaido | Hokkaido Univ. | Characterization of carbon nanotube thin-film transistors by scanning probe microscopy Yuki Okigawa, Yutaka Ohno (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2010-197 SDM2010-232 |
The electrical properties of CNT-FETs fabricated using PECVD were studied by scanning probe microscopy. The measured res... [more] | ED2010-197 SDM2010-232 pp.31-36 |
| ED | 2010-06-17 16:40 |
Ishikawa | JAIST | Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2010-41 |
[more] | ED2010-41 pp.41-45 |
| ED, SDM | 2010-02-23 09:30 |
Okinawa | Okinawaken-Seinen-Kaikan | [Invited Talk]
Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-205 SDM2009-202 |
In order to control the property of carbon nanotube field-effect transistors (CNFETs), it is important to understand pro... [more] | ED2009-205 SDM2009-202 pp.53-58 |
| ED, MW | 2010-01-14 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169 |
Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] | ED2009-186 MW2009-169 pp.65-70 |
| SDM, ED | 2009-02-26 16:55 |
Hokkaido | Hokkaido Univ. | RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) ED2008-231 SDM2008-223 |
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] | ED2008-231 SDM2008-223 pp.41-46 |
| LQE, ED, CPM | 2008-11-28 11:40 |
Aichi | Nagoya Institute of Technology | Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119 |
Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] | ED2008-175 CPM2008-124 LQE2008-119 pp.115-120 |
| LQE, ED, CPM | 2008-11-28 13:05 |
Aichi | Nagoya Institute of Technology | Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-176 CPM2008-125 LQE2008-120 |
The AlGaN/GaN MOSFETs with HfO2 as a gate insulator deposited by ALD has been fabricated and characterized. The lower th... [more] | ED2008-176 CPM2008-125 LQE2008-120 pp.121-124 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| SDM, ED | 2008-07-09 15:55 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Characterization of Carbon Nanotube FETs by Electric Force Microscopy Takashi Mizutani (Nagoya Univ.) ED2008-49 SDM2008-68 |
[more] | ED2008-49 SDM2008-68 pp.53-58 |
| ED | 2008-06-14 09:50 |
Ishikawa | Kanazawa University | Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) ED2008-34 |
Fluidic Self-Assembly (FSA) is an innovative technique for heterogeneous integration. This technique enables us to assem... [more] | ED2008-34 pp.67-72 |
| ED, SDM | 2008-01-31 10:15 |
Hokkaido | Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258 |
Ultra-short pulse generations were demonstrated on the two types of resonant tunneling diode (RTD) pulse generators. T... [more] |
ED2007-247 SDM2007-258 pp.51-56 |
|
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
Control of electrical properties of carbon nanotube FETs Takashi Mizutani (Nagoya Univ.) |
[more] | |
| SDM, ED | 2007-02-01 14:10 |
Hokkaido | A resonant tunneling diode pair oscillator for high power operation Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
High power operation was demonstrated for the novel RTD oscillator circuit fabricated with metamorphic RTDs. The circuit... [more] | ED2006-242 SDM2006-230 pp.13-16 |
|
| ED, SDM | 2006-01-27 11:45 |
Hokkaido | Hokkaido Univ. | A novel resonant tunneling delta-sigma AD converter suitable for high frequency operation Koichi Maezawa, Wataru Matsubara, Koki Furukawa, Takashi Mizutani (Nagoya Univ.) |
A $\Delta\Sigma$ modulator using a frequency modulation intermediate signal was demonstrated using a resonant tunneling ... [more] | ED2005-237 SDM2005-249 pp.33-38 |
| LQE | 2004-12-03 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dual Wavelength High Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly Technique Tomaoaki Tojo, Kazuhiko Yamanaka, Kazutoshi Onozawa, Brahm Pal Singh, Daisuke Ueda (MEI), Ikuo Soga, Koich Maezawa, Takashi Mizutani (Nagoya Univ.) |
We have developed dual wavelength high power laser diodes (LDs) with a hybrid integrated solution, in which a 660 nm LD ... [more] | LQE2004-128 pp.55-58 |
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