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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2018-12-18
09:00
Miyagi RIEC, Tohoku Univ. [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] ED2018-62
pp.35-38
ED, THz 2017-12-19
09:40
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
ED 2014-12-22
14:35
Miyagi   Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] ED2014-101
pp.15-19
ED 2014-12-22
15:00
Miyagi   Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] ED2014-102
pp.21-26
ED 2013-12-16
13:55
Miyagi Research Institute of Electrical Communication Tohoku University Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] ED2013-92
pp.13-17
ED 2012-12-17
13:00
Miyagi Tohoku University DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] ED2012-93
pp.1-6
ED 2011-12-14
13:40
Miyagi Tohoku University Monte Carlo Simulations of InGaAs/InAs/InGaAs Composite Channel HEMTs -- Band Structure of Strained InAs and Self-Consistent Analysis of 2DEG --
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2011-101
To achieve high-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is usedas a channel. In t... [more] ED2011-101
pp.7-12
ED 2010-12-17
11:15
Miyagi Tohoku University (Research Institute of Electrical Communication) Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2010-168
To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a ch... [more] ED2010-168
pp.59-64
ED 2010-06-17
15:15
Ishikawa JAIST Fabrication of high-frequency and high-power AlGaN/GaN HEMTs
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] ED2010-38
pp.25-30
ED 2009-11-29
15:30
Osaka Osaka Science & Technology Center Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations
Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163
To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] ED2009-163
pp.19-23
ED, LQE, CPM 2009-11-20
15:50
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band
Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] ED2009-159 CPM2009-133 LQE2009-138
pp.151-155
MW, ED 2009-01-15
14:50
Tokyo Kikai-Shinko-Kaikan Bldg High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2008-214 MW2008-179
pp.95-99
MW, ED 2009-01-16
09:55
Tokyo Kikai-Shinko-Kaikan Bldg Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] ED2008-219 MW2008-184
pp.119-123
ED 2008-12-19
15:05
Miyagi Tohoku Univ. Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions
Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] ED2008-187
pp.15-20
ED 2007-11-27
13:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ED 2007-11-27
13:55
Miyagi Tohoku Univ. Research Institute of Electrical Communication Fabrication of ultrafast InP-based HEMTs for MMIC application
Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2007-188
pp.7-10
ED 2007-11-27
14:45
Miyagi Tohoku Univ. Research Institute of Electrical Communication Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] ED2007-190
pp.17-21
ED, SDM, R 2006-11-24
15:15
Osaka Central Electric Club Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate --
Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT)
 [more] R2006-35 ED2006-180 SDM2006-198
pp.21-25
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