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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST)  ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| SDM, EID | 2014-12-12 11:30 |
Kyoto | Kyoto University | Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST) EID2014-19 SDM2014-114 |
In case of the laser process with BSG (Boron Silicate Glass) as the doping precursor, we have the problem about the amou... [more] | EID2014-19 SDM2014-114 pp.31-35 |
| SDM | 2013-12-13 10:00 |
Nara | NAIST | Silicon nanowire growth by vapor liquid solid mode using indium dots Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST) SDM2013-119 |
A silicon nanowire (Si-NW) structure is one of the key structures to improve conversion efficiency in silicon solar cell... [more] | SDM2013-119 pp.19-23 |
| SDM | 2013-12-13 10:40 |
Nara | NAIST | Fabrication of n-type Silicon Solar Cells by boron doping method using laser process Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST) SDM2013-121 |
To fabricate the n-type solar cells by boron doping with conventional diffusion process is difficult because of low diff... [more] | SDM2013-121 pp.31-35 |
| SDM | 2013-12-13 11:00 |
Nara | NAIST | Fabrication of Single-Crystalline Silicon Solar Cells by Laser Doping using Phosphorus-Doped Silicon Nano Ink Takanori Okamura, Hideki Nishimura, Takashi Fuyuki (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin) SDM2013-122 |
Localized doping and depth controllability are necessary for fabricating high efficiency silicon solar cell structures s... [more] | SDM2013-122 pp.37-41 |
| SDM | 2013-12-13 17:00 |
Nara | NAIST | A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132 |
4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] | SDM2013-132 pp.97-100 |
| SDM | 2013-12-13 17:40 |
Nara | NAIST | Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2013-134 |
Silicon carbide surface with 4°-off toward <11-20> was chemically etched by chlorine-trifluoride gas without plasma. The... [more] | SDM2013-134 pp.107-112 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2012-12-07 10:15 |
Kyoto | Kyoto Univ. (Katsura) | Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were f... [more] | SDM2012-116 pp.7-12 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| SDM | 2012-12-07 14:15 |
Kyoto | Kyoto Univ. (Katsura) | Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST) SDM2012-128 |
[more] | SDM2012-128 pp.77-81 |
| SDM | 2012-12-07 14:30 |
Kyoto | Kyoto Univ. (Katsura) | Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST) SDM2012-129 |
The laser doping (LD) has many attention because it enable improvement of the cell efficiency and reduction of the cost ... [more] | SDM2012-129 pp.83-87 |
| SDM | 2012-12-07 14:45 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-130 |
[more] | SDM2012-130 pp.89-93 |
| SDM | 2012-12-07 15:15 |
Kyoto | Kyoto Univ. (Katsura) | Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-131 |
Laser doping (LD) is a new process to produce a low-cost, high efficient crystalline silicon solar cells. Since LD can p... [more] | SDM2012-131 pp.95-99 |
| SDM | 2012-12-07 15:45 |
Kyoto | Kyoto Univ. (Katsura) | Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST) SDM2012-133 |
The electroluminescence (EL) imaging has received spatially resolved information about the electronic material propertie... [more] | SDM2012-133 pp.107-111 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2010-12-17 11:20 |
Kyoto | Kyoto Univ. (Katsura) | Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process Mitsuhiro Hasegawa, Kenji Hirata, Tamaki Takayama, Tomohiro Funatani, Takashi Fuyuki (NAIST) SDM2010-189 |
In the fabrication of silicon solar cells process, laser doping (LD) technique is recently gathering many attentions bec... [more] | SDM2010-189 pp.25-28 |
| SDM | 2010-12-17 11:40 |
Kyoto | Kyoto Univ. (Katsura) | Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process Tomohiro Funatani, Kenji Hirata, Tamaki Takayama, Mitsuhiro Hasegawa, Takashi Fuyuki (NAIST) SDM2010-190 |
This paper presents influence of dopant precursor layer in Laser Doping (LD) for silicon solar cells. Recently，reducing ... [more] | SDM2010-190 pp.29-32 |
| SDM | 2009-12-04 09:40 |
Nara | NAIST | Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2009-152 |
A change in the interface state density in 4H-SiC metal-oxide-semiconductor (MOS) structures by incorporation of various... [more] | SDM2009-152 pp.5-10 |
| SDM | 2008-12-05 13:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] | SDM2008-189 pp.27-30 |
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