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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2016-04-14
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance
Hitoshi Saito, Ko Nakamura, Soichiro Ozawa, Naoya Sashida, Satoru Mihara, Yukinobu Hikosaka, Wensheng Wang, Tomoyuki Hori, Kazuaki Takai, Mitsuharu Nakazawa, Noboru Kosugi, Makoto Hamada, Shoichiro Kawashima, Takashi Eshita, Masato Matsumiya (FSL) ICD2016-9
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to ... [more] ICD2016-9
pp.45-49
ICD, SDM 2010-08-27
10:15
Hokkaido Sapporo Center for Gender Equality [Invited Talk] Development of sub-10um Thinning Technology using Actual Device Wafers
Nobuhide Maeda, Kim Youngsuk (Univ. of Tokyo), Yukinobu Hikosaka, Takashi Eshita (FSL), Hideki Kitada, Koji Fujimoto (Univ. of Tokyo), Yoriko Mizushima (Fujitsu Labs.), Kousuke Suzuki (DNP), Tomoji Nakamura (Fujitsu Labs.), Akihito Kawai, Kazuhisa Arai (DISCO), Takayuki Ohba (Univ. of Tokyo) SDM2010-141 ICD2010-56
200-mm and 300-mm device wafers were successfully thinned down to less than 10-μm. A 200-nm non-crystalline layer remain... [more] SDM2010-141 ICD2010-56
pp.95-97
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