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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-01-28
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia) SDM2019-84		 We develop strategies to maximize the performance and reliability of in-memory reinforcement learning with Hf1-xZrxO2 fe... [more] SDM2019-84
p.9
ICD, SDM 2010-08-27
14:35		 Hokkaido Sapporo Center for Gender Equality Application of spin MOSFET to Nonvolatile and Reconfigurable LSIs
Tomoaki Inokuchi, Takao Marukame, Tetsufumi Tanamoto, Hideyuki Sugiyama, Mizue Ishikawa, Yoshiaki Saito (Toshiba Corporation) SDM2010-147 ICD2010-62		 We developed a novel spintronic device “Spin-transfer-Torque Switching-MOSFET (STS-MOSFET)” and demonstrated its reconfi... [more] SDM2010-147 ICD2010-62
pp.125-129
SDM, ED 2007-02-02
09:50		 Hokkaido   Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics
Takao Marukame, Takayuki Ishikawa, Kenichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto (Hokkaido Univ.) 		 [more] ED2006-249 SDM2006-237
pp.51-56
SDM, ED 2007-02-02
10:10		 Hokkaido   Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.) 		An epitaxial Co$_{50}$Fe$_{50}$/MgO/Co$_{50}$Fe$_{50}$ magnetic tunnel junction (MTJ) was fabricated and a relatively hi... [more] ED2006-250 SDM2006-238
pp.57-62
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