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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-08
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Reliability for Advanced Semiconductor Devices
Takamitsu Ishihara, Kazuya Matsuzawa, Takeshi Naito, Sadayuki Yoshitomi (TMC) SDM2018-67		  [more] SDM2018-67
pp.17-22
SDM 2014-11-06
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling and Simulation of Charge-Trapping Memory and Reliability Issues
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba) SDM2014-102		 Charge-trapping memory is one of the most promising candidates as the next generation memory. The complicated operation ... [more] SDM2014-102
pp.37-42
CAS
(2nd)		 2010-10-06
09:45		 Chiba Makuhari Messe [Invited Talk] Impact of DFR simulation from device to circuit
Kazuya Matsuzawa, Daisuke Hagishima, Takamitsu Ishihara (Advanced LSI Technology Lab. TOSHIBA) 		Long term-reliability must be considered in the value of LSI as well as function and performance. Conventionally, the LS... [more]
SDM 2009-06-19
15:40		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39		 Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] SDM2009-39
pp.71-76
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