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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, R, ED 2007-11-16
14:15		 Osaka   High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217		 We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] R2007-49 ED2007-182 SDM2007-217
pp.19-22
CPM, ED, LQE 2007-10-12
11:15		 Fukui Fukui Univ. Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71		 We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] ED2007-170 CPM2007-96 LQE2007-71
pp.73-76
MW, ED 2007-01-19
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) 		Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] ED2006-232 MW2006-185
pp.179-182
ED, SDM 2006-01-27
10:55		 Hokkaido Hokkaido Univ. Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit
Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ) 		(To be available after the conference date) [more] ED2005-235 SDM2005-247
pp.21-26
 Results 1 - 4 of 4  /   
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