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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2013-04-11 09:00 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Talk]
A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP) ICD2013-1 |
[more] |
ICD2013-1 pp.1-4 |
ITE-MMS, MRIS |
2009-10-09 10:25 |
Fukuoka |
FUKUOKA traffic center |
[Invited Talk]
Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
MR2009-26 pp.31-35 |
ICD, SDM |
2009-07-17 12:00 |
Tokyo |
Tokyo Institute of Technology |
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
SDM2009-112 ICD2009-28 pp.79-83 |
SDM |
2008-03-14 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Phase change memory with good data retention Takahiro Morikawa (CRL, Hitachi) |
[more] |
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SDM |
2007-03-15 13:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) |
A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., c... [more] |
SDM2006-254 pp.1-6 |
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