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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] | 2018-01-25 10:20 |
Hyogo | Current-injection two-color lasing at room temperature using a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding Xiangmeng Lu, Yasuo Minami (Tokushima Univ.), Naoto Kumagai (AIST), Ken Morita (Chiba Univ.), Takahiro Kitada (Tokushima Univ.)  PN2017-40 EMT2017-77 OPE2017-118 LQE2017-100 EST2017-76 MWP2017-53 |
We have investigated a novel kind of surface-emitting THz device based on a GaAs/AlGaAs coupled multilayer cavity, in wh... [more] | PN2017-40 EMT2017-77 OPE2017-118 LQE2017-100 EST2017-76 MWP2017-53 pp.9-14 |
|
| EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] | 2017-01-26 14:45 |
Tokushima | Tokushima Univ. | [Invited Talk]
Novel Terahertz Light Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity Takahiro Kitada, Yasuo Minami, Xiangmeng Lu (Tokushima Univ.) EID2016-33 |
We have proposed planar-type and room-temperature operable terahertz light emitting devices based on a semiconductor cou... [more] | EID2016-33 pp.33-36 |
| LQE, LSJ | 2016-05-20 13:50 |
Fukui | Tow-color VCSELs based on a coupled multilayer cavity for novel terahertz emission device. Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu (Tokushima Univ.) LQE2016-15 |
We fabricated two-color VCSELs based on a semiconductor coupled cavity structure that have been proposed as novel terahe... [more] | LQE2016-15 pp.67-72 |
|
| EST, OPE, LQE, EMT, PN, MWP, IEE-EMT [detail] | 2015-01-30 09:50 |
Osaka | Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source Chiho Harayama, Lu Xiangmeng, Naoto Kumagai, Takahiro Kitada, Toshiro Isu (Tokushima Univ.) PN2014-66 OPE2014-191 LQE2014-178 EST2014-120 MWP2014-88 |
[more] | PN2014-66 OPE2014-191 LQE2014-178 EST2014-120 MWP2014-88 pp.245-250 |
|
| ED | 2012-12-17 14:15 |
Miyagi | Tohoku University | [Invited Talk]
Generation of Terahertz Radiation from a Semiconductor Coupled Multilayer Cavity Ken Morita, Takahiro Kitada, Toshiro Isu (Univ. of Tokusima) ED2012-96 |
We have proposed GaAs/AlAs coupled multilayer cavity structure as terahertz (THz) emission devices. In thestructure, the... [more] | ED2012-96 pp.17-21 |
| OPE, OFT | 2012-03-02 14:00 |
Tokyo | Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed Barriers Ken Morita, Hyuga Ueyama, Takahiro Kitada, Toshiro Isu (Univ. of Tokushima) OFT2011-79 OPE2011-205 |
In this work, time-resolved optical measurements of GaAs/AlAs multilayer cavities with the Er-doped InAs quantum dots (Q... [more] | OFT2011-79 OPE2011-205 pp.31-34 |
|
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-29 08:55 |
Kyoto | Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers Takahiro Kitada, Tomoya Takahashi, Ken Morita, Toshiro Isu (Univ. of Tokushima) PN2009-51 OPE2009-189 LQE2009-171 |
A GaAs$\slash$AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In$_{0... [more] | PN2009-51 OPE2009-189 LQE2009-171 pp.85-88 |
|
| ED, SDM, R | 2006-11-24 15:15 |
Osaka | Central Electric Club | Effects of heterointerface flatness on device performance of InP-based HEMT
-- Reduction of interface roughness scattering using (411)A-oriented substrate -- Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) |
[more] | R2006-35 ED2006-180 SDM2006-198 pp.21-25 |
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