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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] 2016-01-28
10:55		 Hyogo   Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure
Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64		 Since a long-wavelength transistor lasers（TL）has 3 electrical terminals, which are different from the conventional LDs, ... [more] PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64
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