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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2013-02-27
16:55		 Hokkaido Hokkaido Univ. Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164		 Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] ED2012-135 SDM2012-164
pp.39-42
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