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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-02-05 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28-nm Node and Beyond K. Ohmori, K. Mori, K. Maekawa (Renesas), Kazuyuki Kohama, Kazuhiro Ito (Kyoto Univ.), T. Ohnishi, M. Mizuno (KOBE STEEL), K. Asai (Renesas), M. Murakami (Ritsumeikan Trust), Hiroshi Miyatake (Renesas) SDM2009-188 |
With continuous shrinkage of advanced ULSIs, the impact of line resistance on the devices has become more and more serio... [more] |
SDM2009-188 pp.37-41 |
ICD |
2007-04-13 13:00 |
Oita |
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[Invited Talk]
High Speed Unipolar Switching Resistance RAM (RRAM) Technology Yasunari Hosoi, Yukio Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T.Nakano, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp), I. H. Inoue, Hisashi Shima (AIST(NEDO)), Hiroyuki Akinaga, Hidenori Takagi, Hiroshi Akoh (AIST(CERC)) ICD2007-14 |
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (T... [more] |
ICD2007-14 pp.77-82 |
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