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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2014-01-17
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
pp.79-84
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