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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MICT, WBS, RCC, SAT (Joint) [detail] |
2023-05-26 13:30 |
Tokyo |
TOKYO BIG SIGHT (Primary: On-site, Secondary: Online) |
[Special Talk]
Development history of RF components for satellite communication Shunsuke Okada, Chihiro Sakakibara, Hiruta Masaki (NECSpace) SAT2023-8 MICT2023-8 |
NECSpace have developed on-board equipment for satellite from the very beginning of space development history in Japan. ... [more] |
SAT2023-8 MICT2023-8 pp.38-41 |
SDM |
2020-01-28 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia Masaki Noguchi, Tatsunori Isogai, Hiroyuki Yamashita, Keiichi Sawa, Ryota Fujitsuka, Takanori Yamanaka, Shunsuke Okada, Tomonori Aoyama, Fumiki Aiso, Junko Abe, Yoshiro Ogawa, Seiji Nakagawa, Hideshi Miyajima (KIOXIA) SDM2019-82 |
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated tunnel SiON and charge-trap SiN film... [more] |
SDM2019-82 pp.1-4 |
LQE, ED, CPM |
2014-11-28 16:00 |
Osaka |
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Effects of thermal cleaning on surface of bulk GaN substrates Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124 |
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] |
ED2014-96 CPM2014-153 LQE2014-124 pp.111-115 |
ED, LQE, CPM |
2012-11-30 09:30 |
Osaka |
Osaka City University |
Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105 |
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] |
ED2012-77 CPM2012-134 LQE2012-105 pp.51-54 |
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