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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
Shizuoka Shizuoka Univ. (Hamamatsu) Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] ED2019-41 CPM2019-60 LQE2019-84
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