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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-28
11:40
Aichi Nagoya Institute of Technology Device simulation of HfO2/AlGaN/GaN MOSFET -- effects of HfO2/AlGaN interface --
Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119
Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] ED2008-175 CPM2008-124 LQE2008-119
pp.115-120
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