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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
16:10		 Aichi VBL, Nagoya Univ. Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53		 The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] SDM2015-53
pp.81-86
SDM 2013-06-18
13:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states
Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54		 Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access... [more] SDM2013-54
pp.51-55
SDM 2012-06-21
09:20		 Aichi VBL, Nagoya Univ. Resistive Switching Properties of Directly Bonded SrTiO3 Substrate
Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2012-44		 As one of new non-volatile memory devices, much attention has been paid to the resistive switching memory which has a me... [more] SDM2012-44
pp.7-12
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