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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, VLD 2007-10-30
15:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201		 Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]		 VLD2007-57 SDM2007-201
pp.33-36
SDM, VLD 2007-10-30
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203		 We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
pp.43-46
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