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 7件中 1~7件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
Shizuoka Shizuoka Univ. (Hamamatsu) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] ED2019-39 CPM2019-58 LQE2019-82
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
Osaka Osaka University Nakanoshima Center InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Masahiro Uemukai, So Kusumoto, Daiki Tazuke (Osaka Univ.), Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue (Toshiba), Ryuji Katayama (Osaka Univ.) PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion ... [more] PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
ED, LQE, CPM 2018-11-29
Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
LQE, CPM, ED 2017-12-01
Aichi Nagoya Inst. tech. Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75
 [more] ED2017-62 CPM2017-105 LQE2017-75
ED, LQE, CPM 2012-11-30
Osaka Osaka City University Analysis of band structure and Auger recombination process in wurtzite InGaN
Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114
A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy di... [more] ED2012-86 CPM2012-143 LQE2012-114
ICD, CPM 2007-01-19
Tokyo Kika-Shinko-Kaikan Bldg. Development of Packages for Ultra-violet Light-Emitting Diodes -- Approach to high-light-extraction efficiency by Flip-Chip packages --
Iwao Mitsuishi, Shinya Nunoue, Hiroshi Yamada, Shinya Nunoue (Toshiba)
 [more] CPM2006-141 ICD2006-183
ED, CPM, LQE 2006-10-06
Kyoto   Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime
Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba)
The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] ED2006-166 CPM2006-103 LQE2006-70
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