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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-21 13:00 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82 |
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] |
ED2019-39 CPM2019-58 LQE2019-82 pp.29-32 |
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] |
2019-01-18 11:15 |
Osaka |
Osaka University Nakanoshima Center |
InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures Masahiro Uemukai, So Kusumoto, Daiki Tazuke (Osaka Univ.), Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue (Toshiba), Ryuji Katayama (Osaka Univ.) PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94 |
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion ... [more] |
PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94 pp.243-246 |
ED, LQE, CPM |
2018-11-29 14:15 |
Aichi |
Nagoya Inst. tech. |
Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] |
ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
LQE, CPM, ED |
2017-12-01 12:55 |
Aichi |
Nagoya Inst. tech. |
Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75 |
[more] |
ED2017-62 CPM2017-105 LQE2017-75 pp.65-68 |
ED, LQE, CPM |
2012-11-30 14:30 |
Osaka |
Osaka City University |
Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114 |
A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy di... [more] |
ED2012-86 CPM2012-143 LQE2012-114 pp.97-101 |
ICD, CPM |
2007-01-19 09:00 |
Tokyo |
Kika-Shinko-Kaikan Bldg. |
Development of Packages for Ultra-violet Light-Emitting Diodes
-- Approach to high-light-extraction efficiency by Flip-Chip packages -- Iwao Mitsuishi, Shinya Nunoue, Hiroshi Yamada, Shinya Nunoue (Toshiba) |
[more] |
CPM2006-141 ICD2006-183 pp.73-76 |
ED, CPM, LQE |
2006-10-06 11:50 |
Kyoto |
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Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba) |
The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] |
ED2006-166 CPM2006-103 LQE2006-70 pp.79-82 |
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