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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| QIT (2nd) |
2021-05-24 13:30 |
Online | Online | [Poster Presentation]
Fabrication of silicon-vacancy centers in nanodiamonds Konosuke Shimazaki, Hiroki Kawaguchi, Hideaki Takashima (Kyoto Univ.), Takuya F. Segawa (ETH Zurich), Frederick So, Daiki Terada (Kyoto Univ.), Shinobu Onoda, Takeshi Ohshima (QST), Masahiro Shirakawa, Shigeki Takeuchi (Kyoto Univ.) |
[more] | |
| QIT (2nd) |
2017-11-16 13:50 |
Saitama | Saitama University | [Poster Presentation]
The realization of silicon-vacancy centers in nanodiamonds Yusuke Iwabata, Atsushi Fukuda, Hideaki Takashima (Kyoto Univ.), Andreas W. Schell (ICFO), Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima (QST), Shigeki Takeuchi (Kyoto Univ.) |
Color centers in diamond have merged as versatile tools for quantum information, quantum metrology and bio-sensing. Rece... [more] | |
| SDM | 2012-12-07 10:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA)  SDM2012-117 |
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] | SDM2012-117 pp.13-18 |
| SDM | 2010-12-17 14:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of majority carrier density in 4H-SiC epilayer by 200keV electron irradiation Takunori Nojiri, Kozo Nishino, Hideki Yanagisawa, Hideharu Matsuura (Osaka Electro-Communication Univ.), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2010-195 |
The temperature dependencies of the majority-carrier concentrations in Al-doped 4H-SiC or N-doped 4H-SiC epilayers with ... [more] | SDM2010-195 pp.57-62 |
| SANE | 2008-06-26 16:30 |
Ibaraki | Tsukuba Space Center (JAXA) | Radiation-Induced Transient-Pulses in Logic LSIs for Use in Space Applications Takahiro Makino (SOKENDAI), Yoshimitsu Yanagawa (U. Tokyo), Daisuke Kobayashi (SOKENDAI/JAXA), Seisuke Fukuda (JAXA), Kazuyuki Hirose, Hirokazu Ikeda (SOKENDAI/JAXA), Hirobumi Saito (U. Tokyo/JAXA), Shinobu Onoda, Toshio Hirao, Takeshi Ohshima (JAEA), Daisuke Takahashi, Shigeru Ishii, Masaki Kusano, Hiroshi Ikebuchi, Yoshikatsu Kuroda (MHI) SANE2008-25 |
SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF... [more] |
SANE2008-25 pp.67-72 |
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